Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both p-GaN and undoped-GaN surfaces and applying a mirror to the sapphire substrate surface

Cheng Liao*, Wei Chih Peng, Yew-Chuhg Wu

*此作品的通信作者

研究成果: Conference contribution › 同行評審

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Engineering & Materials Science