@inproceedings{93221fcf7375455b904596778ebd4142,
title = "Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both p-GaN and undoped-GaN surfaces and applying a mirror to the sapphire substrate surface",
abstract = "InGaN-GaN light emitting diodes (LEDs) with double roughened surfaces and silver mirror was fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. It was found the light intensity of DRM-LED (with mirror between undoped-GaN/sapphire interface) was 3.05 times higher than that of the PR-LED (with only roughened p-GaN surface), and 1.45 times higher than that of the DRSM-LED (with mirror on the backside of sapphire substrate).",
author = "Cheng Liao and Peng, {Wei Chih} and Yew-Chuhg Wu",
year = "2007",
month = dec,
day = "1",
doi = "10.1149/1.2731185",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
number = "2",
pages = "201--203",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}