@article{f8b7f56ec6c343e49d8f3292959d8658,
title = "Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric",
abstract = "Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.",
author = "Hsu, {Ching Hsiang} and Shih, {Wang Cheng} and Lin, {Yueh Chin} and Heng-Tung Hsu and Hsu, {Hisang Hua} and Huang, {Yu Xiang} and Lin, {Tai Wei} and Wu, {Chia Hsun} and Wu, {Wen Hao} and Maa, {Jer Shen} and Hiroshi Iwai and Kuniyuki Kakushima and Chang, {Edward Yi}",
note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",
year = "2016",
month = apr,
doi = "10.7567/JJAP.55.04EG04",
language = "English",
volume = "55",
journal = "Japanese journal of applied physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4",
}