Improved I-V model of small geometry MOSFETs for SPICE

Steve S. Chung*, T. S. Lin, Y. G. Chen

*此作品的通信作者

    研究成果: Conference article同行評審

    摘要

    A description is given of a computationally efficient SPICE model for accurate prediction of the I-V and threshold voltage characteristics of small-geometry MOSFETs. The model based on an enhancement of the SPICE LEVEL3 MOS model and a novel approach of parameter extraction. The expressions achieved for the drain currents hold in the weak inversion, strong inversion, and saturation regimes of operation. The model supports the design of both short-channel and narrow-gate MOSFETs with any kind of implanted channel. Accuracy and benchmark tests show substantial improvements over the original LEVEL3 model.

    原文English
    期刊Proceedings of the Custom Integrated Circuits Conference
    出版狀態Published - 1 5月 1989
    事件Proceedings of the IEEE 1989 Custom Integrated Circuits Conference - San Diego, CA, SA
    持續時間: 15 5月 198918 5月 1989

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