Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

C. H. Cheng*, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin

*此作品的通信作者

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

原文English
頁(從 - 到)1095-1097
頁數3
期刊IEEE Electron Device Letters
28
發行號12
DOIs
出版狀態Published - 1 十二月 2007

指紋

深入研究「Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode」主題。共同形成了獨特的指紋。

引用此