Improved GaAs wafer bonding process for quasi-phase-matched (QPM) second harmonic generation (SHG)

Yew-Chuhg Wu*, Robert S. Feigelson, Roger K. Route, Dong Zheng, Leslie A. Gordon, Martin M. Fejer, Robert L. Byer

*此作品的通信作者

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.

原文English
頁(從 - 到)451-452
頁數2
期刊Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
11
DOIs
出版狀態Published - 1 1月 1997
事件Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
持續時間: 18 5月 199723 5月 1997

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