Improved flash cell performance by N2O annealing of interpoly oxide

Fuh Cheng Jong*, Tiao Yuan Huang, Tien-Sheng Chao, Horng-Chih Lin, Len Yi Leu, Konrad Young, Chen Hsi Lin, Kuang Y. Chiu

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.

原文English
頁(從 - 到)343-345
頁數3
期刊IEEE Electron Device Letters
18
發行號7
DOIs
出版狀態Published - 1 7月 1997

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