@inproceedings{b1a90af639e14c7fa61acb07c83b8ae8,
title = "Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED",
abstract = "Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.",
author = "Wen, {T. C.} and Chang, {S. J.} and Su, {Y. K.} and Wu, {L. W.} and Cheng-Huang Kuo and Hsu, {Y. P.} and Lai, {W. C.} and Sheu, {J. K.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/ISDRS.2003.1272004",
language = "English",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "77--78",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
address = "United States",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}