Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED

T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, Cheng-Huang Kuo, Y. P. Hsu, W. C. Lai, J. K. Sheu

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88SN/GaN Superlattice are introduced to improve ESD reliability in Nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88SN /GaN herterostructure. Therefore the probability of junction breakdown would be lower.

原文English
主出版物標題2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面77-78
頁數2
ISBN(電子)0780381394, 9780780381391
DOIs
出版狀態Published - 2003
事件International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, 美國
持續時間: 10 12月 200312 12月 2003

出版系列

名字2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
國家/地區美國
城市Washington
期間10/12/0312/12/03

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