Improved electrical properties of Gd2 O3 GaAs capacitor with modified wet-chemical clean and sulfidization procedures

Keyphrases

• Alkaline Solution 33%
• Arsenic Segregation 33%
• Capacitor 100%
• Charge Trapping 33%
• Dielectric Thin Films 33%
• Electrical Characteristics 33%
• Electrical Properties 100%
• Elemental Arsenic 33%
• Fermi Level pinning Effect 33%
• Frequency Dispersion 33%
• GaAs Structure 33%
• GaAs Substrate 33%
• GaAs Surface 33%
• Gallium Arsenide 100%
• Gate Leakage 33%
• Gate Voltage 33%
• Gd2O3 100%
• Interfacial Layer 33%
• Native Oxide 33%
• Oxide Capacitance 33%
• Oxide Species 33%
• Passivation 33%
• Rinsing 33%
• SiGe 33%
• Sulfidization 100%
• Sulfur 33%
• Ultrathin 33%
• Wet Chemical Method 100%
• X-ray Photoelectron Spectroscopy Analysis 33%

Material Science

• Arsenic 33%
• Capacitance 16%
• Capacitor 100%
• Charge Trapping 16%
• Dielectric Material 16%
• Electrical Property 100%
• Gallium Arsenide 100%
• Oxide Compound 50%
• Thin Films 16%
• X-Ray Photoelectron Spectroscopy 16%