@inproceedings{eb7d29c5ea624bb9a80339131d9fe2a1,
title = "Improved electrical performance of NILC poly-Si TFTs manufactured using H2SO4 and HCl solution",
abstract = "In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.",
author = "Chen, {Yu Chung} and Chao, {Yu Cheng} and Yew-Chuhg Wu",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481232",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
number = "5",
pages = "165--168",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
note = "10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}