Keyphrases
In Situ
100%
Electrical Characteristics
100%
Interfacial Layer
100%
GeOx
100%
Plasma-enhanced Atomic Layer Deposition (PEALD)
100%
Ge pMOSFET
100%
PMOSFET
50%
Gate Stack
50%
Ge Channel
50%
Leakage Current
25%
Current Density
25%
Low Leakage Current
25%
Interface Traps
25%
High Mobility
25%
X-ray Photoelectron Spectroscopy Analysis
25%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Interfacial Layer
100%
Atomic Layer Deposition
100%
Gate Stack
50%
Ray Photoelectron Spectroscopy
25%
Interface Trap
25%
Material Science
Electrical Property
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Density
33%
X-Ray Photoelectron Spectroscopy
33%
Chemical Engineering
Atomic Layer Deposition
100%