Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition

Hui Hsuan Li, Yu Hsien Lin*, Tsung Yen Tu, Chao Hsin Chien*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this study, we successfully investigated Hf-based gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.

原文English
主出版物標題7th IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350332520
DOIs
出版狀態Published - 2023
事件7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
持續時間: 7 3月 202310 3月 2023

出版系列

名字7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
國家/地區Korea, Republic of
城市Seoul
期間7/03/2310/03/23

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