@inproceedings{ca5112d005254e1789fefd402fac473b,
title = "Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition",
abstract = "In this study, we successfully investigated Hf-based gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.",
keywords = "Germanium, germanium oxide, in situ, interfacial layer (IL), plasma-enhanced atomic layer deposition (PEALD), pMOSFET",
author = "Li, {Hui Hsuan} and Lin, {Yu Hsien} and Tu, {Tsung Yen} and Chien, {Chao Hsin}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",
year = "2023",
doi = "10.1109/EDTM55494.2023.10102932",
language = "English",
series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",
address = "美國",
}