Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

Y. H. Wu*, W. J. Chen, S. L. Chang, Albert Chin, S. Gwo, Chung-Yong Tsai

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

We have developed a simple process to form epitaxial CoSi2 for shallow junction. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed by scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.

原文English
文章編號761014
頁(從 - 到)200-202
頁數3
期刊IEEE Electron Device Letters
20
發行號5
DOIs
出版狀態Published - 1 五月 1999

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