TY - JOUR
T1 - Improved electrical characteristics and reliability of MILC Poly-Si TFTs using fluorine-ion implantation
AU - Chang, Chih Pang
AU - Wu, Yew-Chuhg
PY - 2007/11/1
Y1 - 2007/11/1
N2 - In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implantedMILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.
AB - In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implantedMILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.
KW - Fluorine-ion implantation
KW - Metal-induced lateral crystallization (MILC)
KW - Polycrystalline-silicon thin-film transistors (poly-Si TFTs)
UR - http://www.scopus.com/inward/record.url?scp=36148978625&partnerID=8YFLogxK
U2 - 10.1109/LED.2007.906803
DO - 10.1109/LED.2007.906803
M3 - Article
AN - SCOPUS:36148978625
VL - 28
SP - 990
EP - 992
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 11
ER -