Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

C. H. Chen, Y. K. Fang^*, C. W. Yang, S. F. Ting, Y. S. Tsair, C. N. Chang, Tuo-Hung Hou, M. F. Wang, M. C. Yu, C. L. Lin, S. C. Chen, C. H. Yu, M. S. Liang

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