Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

C. H. Chen; Y. K. Fang; C. W. Yang; S. F. Ting; Y. S. Tsair; C. N. Chang; Tuo-Hung Hou; M. F. Wang; M. C. Yu; C. L. Lin; S. C. Chen; C. H. Yu; M. S. Liang

doi:10.1016/S0038-1101(01)00262-3

Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

C. H. Chen
, Y. K. Fang^*
, C. W. Yang
, S. F. Ting
, Y. S. Tsair
, C. N. Chang
, Tuo-Hung Hou
, M. F. Wang
, M. C. Yu
, C. L. Lin
, S. C. Chen
, C. H. Yu
, M. S. Liang

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.

原文	English
頁（從 - 到）	597-599
頁數	3
期刊	Solid-State Electronics
卷	46
發行號	4
DOIs	https://doi.org/10.1016/S0038-1101(01)00262-3
出版狀態	Published - 1 4月 2002

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10.1016/S0038-1101(01)00262-3

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Chen, C. H., Fang, Y. K., Yang, C. W., Ting, S. F., Tsair, Y. S., Chang, C. N., Hou, T.-H., Wang, M. F., Yu, M. C., Lin, C. L., Chen, S. C., Yu, C. H., & Liang, M. S. (2002). Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric. Solid-State Electronics, 46(4), 597-599. https://doi.org/10.1016/S0038-1101(01)00262-3

@article{0ec078047642466fa392f329aa1406b8,

title = "Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric",

abstract = "The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10\% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.",

keywords = "Nitride, PDE, Poly-gate depletion, Poly-SiGe",

author = "Chen, \{C. H.\} and Fang, \{Y. K.\} and Yang, \{C. W.\} and Ting, \{S. F.\} and Tsair, \{Y. S.\} and Chang, \{C. N.\} and Tuo-Hung Hou and Wang, \{M. F.\} and Yu, \{M. C.\} and Lin, \{C. L.\} and Chen, \{S. C.\} and Yu, \{C. H.\} and Liang, \{M. S.\}",

year = "2002",

month = apr,

day = "1",

doi = "10.1016/S0038-1101(01)00262-3",

language = "English",

volume = "46",

pages = "597--599",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "4",

}

Chen, CH, Fang, YK, Yang, CW, Ting, SF, Tsair, YS, Chang, CN, Hou, T-H, Wang, MF, Yu, MC, Lin, CL, Chen, SC, Yu, CH & Liang, MS 2002, 'Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric', Solid-State Electronics, 卷 46, 編號 4, 頁 597-599. https://doi.org/10.1016/S0038-1101(01)00262-3

TY - JOUR

T1 - Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

AU - Chen, C. H.

AU - Fang, Y. K.

AU - Yang, C. W.

AU - Ting, S. F.

AU - Tsair, Y. S.

AU - Chang, C. N.

AU - Hou, Tuo-Hung

AU - Wang, M. F.

AU - Yu, M. C.

AU - Lin, C. L.

AU - Chen, S. C.

AU - Yu, C. H.

AU - Liang, M. S.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.

AB - The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.

KW - Nitride

KW - PDE

KW - Poly-gate depletion

KW - Poly-SiGe

UR - https://www.scopus.com/pages/publications/18244405817

U2 - 10.1016/S0038-1101(01)00262-3

DO - 10.1016/S0038-1101(01)00262-3

M3 - Article

AN - SCOPUS:18244405817

SN - 0038-1101

VL - 46

SP - 597

EP - 599

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4

ER -

Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

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