@article{0ec078047642466fa392f329aa1406b8,
title = "Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric",
abstract = "The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.",
keywords = "Nitride, PDE, Poly-gate depletion, Poly-SiGe",
author = "Chen, {C. H.} and Fang, {Y. K.} and Yang, {C. W.} and Ting, {S. F.} and Tsair, {Y. S.} and Chang, {C. N.} and Tuo-Hung Hou and Wang, {M. F.} and Yu, {M. C.} and Lin, {C. L.} and Chen, {S. C.} and Yu, {C. H.} and Liang, {M. S.}",
year = "2002",
month = apr,
day = "1",
doi = "10.1016/S0038-1101(01)00262-3",
language = "English",
volume = "46",
pages = "597--599",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Ltd",
number = "4",
}