This paper presents high-κ value Ta2O5 (~26)1 incorporated into the HfO2 (~25) 1 film to unproved crystallization temperature and interfacial properties. Both MOS-C and NMOSFET devices were fabricated on (100)Si substrates. After definition of active area and standard pre-gate clean, the NH3 surface nitridation was performed at 700°C for 10sec (XRD, TEM and XPS samples without surface nitridation). HfO2 and (HfO2)1-x(Ta2O5)x were deposited with reactive sputtering at room temperature, and the composition of Ta2O5 was controlled by the power ratio between Hf and Ta target, followed by post-deposition annealing (PDA) in N2 ambient at 700°C for 40 sec. The TaN (~160nm) was deposited using sputtering. After gate patterning, phosphorus for NMOSFETs were implanted at 50 KeV with a dose of 5E15 cm-2. Doping activation was done at the range of 850~1000°C in N2 ambient for 30 sec. After backside Al deposition, FGA was done at 420°C for 30 min.