Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5with TaN metal gate

Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, Nan Wu, Hang Hu, Albert Chin, M. F. Li, D. S.H. Chan, W. D. Wang, Dim Lee Kwong

研究成果: Conference contribution同行評審

摘要

This paper presents high-κ value Ta2O5 (~26)1 incorporated into the HfO2 (~25) 1 film to unproved crystallization temperature and interfacial properties. Both MOS-C and NMOSFET devices were fabricated on (100)Si substrates. After definition of active area and standard pre-gate clean, the NH3 surface nitridation was performed at 700°C for 10sec (XRD, TEM and XPS samples without surface nitridation). HfO2 and (HfO2)1-x(Ta2O5)x were deposited with reactive sputtering at room temperature, and the composition of Ta2O5 was controlled by the power ratio between Hf and Ta target, followed by post-deposition annealing (PDA) in N2 ambient at 700°C for 40 sec. The TaN (~160nm) was deposited using sputtering. After gate patterning, phosphorus for NMOSFETs were implanted at 50 KeV with a dose of 5E15 cm-2. Doping activation was done at the range of 850~1000°C in N2 ambient for 30 sec. After backside Al deposition, FGA was done at 420°C for 30 min.

原文English
主出版物標題2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面62-63
頁數2
ISBN(電子)0780381394, 9780780381391
DOIs
出版狀態Published - 1 一月 2003
事件International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
持續時間: 10 十二月 200312 十二月 2003

出版系列

名字2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
國家/地區United States
城市Washington
期間10/12/0312/12/03

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