摘要
A significant improvement in the stability of high-quality GaN films, for photoelectrochemical hydrogen generation, has been demonstrated using near neutral NaCl(aq) electrolyte instead of conventional acidic HCl (aq). The experimental results conclude that the as-grown surface oxide passivates the surface from corrosion and, therefore, leads to a higher photocurrent. Our result paves the way for the future development of stable hydrogen generation with abundant sea water and high-efficiency III-V compound semiconductors.
原文 | English |
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頁(從 - 到) | 14433-14439 |
頁數 | 7 |
期刊 | International Journal of Hydrogen Energy |
卷 | 38 |
發行號 | 34 |
DOIs | |
出版狀態 | Published - 13 11月 2013 |