摘要
Textured n-GaNi-InGaNp-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured IIE device is about 0.65 mA/cm2, which is 71% and 44% higher than those of the two compared structures, respectively.
原文 | English |
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文章編號 | 5458038 |
頁(從 - 到) | 585-587 |
頁數 | 3 |
期刊 | Ieee Electron Device Letters |
卷 | 31 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 6月 2010 |