Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

D. H. Hsieh; A. J. Tzou; Tsung-Sheng Kao; F. I. Lai; D. W. Lin; B. C. Lin; Tien-Chang Lu; W. C. Lai; Cheng-Huan Chen; Hao-Chung Kuo

doi:10.1364/OE.23.027145

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

D. H. Hsieh, A. J. Tzou, Tsung-Sheng Kao, F. I. Lai, D. W. Lin, B. C. Lin, Tien-Chang Lu, W. C. Lai, Cheng-Huan Chen, Hao-Chung Kuo

光電工程學系

研究成果: Article › 同行評審

38 引文斯高帕斯（Scopus）

摘要

In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm² (9.5 mA) to 10.6 kA/cm² (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

原文	English
頁（從 - 到）	27145-27151
頁數	7
期刊	Optics Express
卷	23
發行號	21
DOIs	https://doi.org/10.1364/OE.23.027145
出版狀態	Published - 19 10月 2015

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@article{99e388161ba3443dbef73ba9635e80ca,

title = "Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer",

abstract = "In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.",

author = "Hsieh, {D. H.} and Tzou, {A. J.} and Tsung-Sheng Kao and Lai, {F. I.} and Lin, {D. W.} and Lin, {B. C.} and Tien-Chang Lu and Lai, {W. C.} and Cheng-Huan Chen and Hao-Chung Kuo",

note = "Publisher Copyright: {\textcopyright} 2015 Optical Society of America.",

year = "2015",

month = oct,

day = "19",

doi = "10.1364/OE.23.027145",

language = "English",

volume = "23",

pages = "27145--27151",

journal = "Optics Express",

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TY - JOUR

T1 - Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

AU - Hsieh, D. H.

AU - Tzou, A. J.

AU - Kao, Tsung-Sheng

AU - Lai, F. I.

AU - Lin, D. W.

AU - Lin, B. C.

AU - Lu, Tien-Chang

AU - Lai, W. C.

AU - Chen, Cheng-Huan

AU - Kuo, Hao-Chung

PY - 2015/10/19

Y1 - 2015/10/19

N2 - In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

AB - In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

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DO - 10.1364/OE.23.027145

M3 - Article

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SN - 1094-4087

VL - 23

SP - 27145

EP - 27151

JO - Optics Express

JF - Optics Express

IS - 21

ER -

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

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