Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, this technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. After gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were reduced.
|主出版物標題||IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings|
|出版狀態||Published - 7月 2007|
|事件||International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan|
持續時間: 3 7月 2007 → 6 7月 2007
|名字||IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings|
|Conference||International Display Manufacturing Conference and Exhibition, IDMC 2007|
|期間||3/07/07 → 6/07/07|