Implementation of a CMOS/MEMS accelerometer with ASIC processes

Yu Sian Liu*, Kuei-Ann Wen

*此作品的通信作者

    研究成果: Article同行評審

    9 引文 斯高帕斯(Scopus)

    摘要

    This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using the 0.18 μm application-specific integrated circuit (ASIC)-compatible CMOS/MEMS process. An approximate analytical model for the spring design is presented. The experiments showed that the resonant frequency of the proposed tri-axis accelerometer was around 5.35 kHz for out-plane vibration. The tri-axis accelerometer had an area of 1096 μm × 1256 μm.

    原文English
    文章編號50
    期刊Micromachines
    10
    發行號1
    DOIs
    出版狀態Published - 12 1月 2019

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