IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

E. S. Yang; E. Poon; C. M. Wu; H. C. Card; Wei Hwang

doi:10.1109/IEDM.1980.189795

IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

E. S. Yang^*, E. Poon, C. M. Wu, H. C. Card, Wei Hwang

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

原文	English
頁（從 - 到）	209-211
頁數	3
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1980.189795
出版狀態	Published - 1 1月 1980
事件	Tech Dig Int Electron Devices Meet - Washington, DC, USA 持續時間: 8 12月 1980 → 10 12月 1980

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10.1109/IEDM.1980.189795

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@article{7a1dd039fecf40c89386ee849b426704,

title = "IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.",

abstract = "A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.",

author = "Yang, {E. S.} and E. Poon and Wu, {C. M.} and Card, {H. C.} and Wei Hwang",

year = "1980",

month = jan,

day = "1",

doi = "10.1109/IEDM.1980.189795",

language = "English",

pages = "209--211",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 08-12-1980 Through 10-12-1980",

}

TY - JOUR

T1 - IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

AU - Yang, E. S.

AU - Poon, E.

AU - Wu, C. M.

AU - Card, H. C.

AU - Hwang, Wei

PY - 1980/1/1

Y1 - 1980/1/1

N2 - A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

AB - A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

UR - http://www.scopus.com/inward/record.url?scp=0019290451&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1980.189795

DO - 10.1109/IEDM.1980.189795

M3 - Conference article

AN - SCOPUS:0019290451

SP - 209

EP - 211

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 8 December 1980 through 10 December 1980

ER -

IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

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