IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

E. S. Yang*, E. Poon, C. M. Wu, H. C. Card, Wei Hwang

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

原文English
頁(從 - 到)209-211
頁數3
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 1月 1980
事件Tech Dig Int Electron Devices Meet - Washington, DC, USA
持續時間: 8 12月 198010 12月 1980

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