TY - GEN
T1 - Impacts of work function variation and line edge roughness on hybrid TFET-MOSFET monolithic 3D SRAMs
AU - Wang, Jian Hao
AU - Su, Pin
AU - Chuang, Ching Te
PY - 2017/6/7
Y1 - 2017/6/7
N2 - We analyze the variability of 7T hybrid TFET-MOSFET SRAM and 8T MOSFET SRAM in monolithic 3D technology operating at ultra-low voltage. The impacts of work function variation (WFV) and line edge roughness (LER) on SRAM cell stability, leakage power and performance are investigated and compared using 3D atomistic TCAD mixed-mode Monte-Carlo simulations. The results indicate that WFV and LER have different impacts on read disturb and Vwrite,0, which dominate SRAM stability and is determined by the distinct current drive of TFET and MOSFET. The performance is influenced by the different variations of gate capacitance (Cg) under WFV and LER.
AB - We analyze the variability of 7T hybrid TFET-MOSFET SRAM and 8T MOSFET SRAM in monolithic 3D technology operating at ultra-low voltage. The impacts of work function variation (WFV) and line edge roughness (LER) on SRAM cell stability, leakage power and performance are investigated and compared using 3D atomistic TCAD mixed-mode Monte-Carlo simulations. The results indicate that WFV and LER have different impacts on read disturb and Vwrite,0, which dominate SRAM stability and is determined by the distinct current drive of TFET and MOSFET. The performance is influenced by the different variations of gate capacitance (Cg) under WFV and LER.
UR - http://www.scopus.com/inward/record.url?scp=85023203132&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2017.7942455
DO - 10.1109/VLSI-TSA.2017.7942455
M3 - Conference contribution
AN - SCOPUS:85023203132
T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Y2 - 24 April 2017 through 27 April 2017
ER -