Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

Chia Chun Liao; Min Chen Lin; Shao Xuan Liu; Tien-Sheng Chao

doi:10.1109/LED.2011.2174609

Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

Chia Chun Liao^*, Min Chen Lin, Shao Xuan Liu, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

原文	English
文章編號	6101550
頁（從 - 到）	239-241
頁數	3
期刊	IEEE Electron Device Letters
卷	33
發行號	2
DOIs	https://doi.org/10.1109/LED.2011.2174609
出版狀態	Published - 1 2月 2012

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10.1109/LED.2011.2174609

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abstract = "This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.",

keywords = "Metal-induced lateral crystallization (MILC), strain, thin-film transistors (TFTs)",

author = "Liao, {Chia Chun} and Lin, {Min Chen} and Liu, {Shao Xuan} and Tien-Sheng Chao",

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AU - Lin, Min Chen

AU - Liu, Shao Xuan

AU - Chao, Tien-Sheng

PY - 2012/2/1

Y1 - 2012/2/1

N2 - This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

AB - This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

KW - Metal-induced lateral crystallization (MILC)

KW - strain

KW - thin-film transistors (TFTs)

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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ER -

Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

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