Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxOand ferroelectric FET performance

Yi Jan Lin, Chih Yu Teng, Chen-Ming Hu, Chun-Jung Su, Yuan-Chieh Tseng*

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs.

原文English
文章編號192102
頁(從 - 到)1-5
頁數5
期刊Applied Physics Letters
119
發行號19
DOIs
出版狀態Published - 8 11月 2021

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