@inproceedings{5479953a76544c679918297a82e82e4d,
title = "Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric",
abstract = "In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and Ioff can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-κ gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.",
keywords = "HfO, High-κ gate dielectric, Nitric acid oxidation, Thin-film transistors (TFTs)",
author = "Yang, {Tsung Yu} and Ma, {Ming Wen} and Kao, {Kuo Hsing} and Su, {Chun Jung} and Tien-Sheng Chao and Lei, {Tan Fu}",
year = "2007",
month = mar,
language = "English",
isbn = "9787561752289",
series = "AD'07 - Proceedings of Asia Display 2007",
pages = "519--522",
booktitle = "AD'07 - Proceedings of Asia Display 2007",
note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",
}