Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μ FE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO 2 gate dielectric after N 2 and NH 3 and NH 3 plasma surface treatments, respectively. In addition, the N 2 and NH 3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μ FE at high gate bias voltage V G , resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V TH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μ FE ∼ 62.02 cm 2 /V · s would be suitable for the application of system-on-panel.
|頁（從 - 到）||1236-1238|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 18 9月 2008|