Impacts of N ₂ and NH ₃ plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- _κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μ _FE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO ₂ gate dielectric after N ₂ and NH ₃ and NH ₃ plasma surface treatments, respectively. In addition, the N ₂ and NH ₃ plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μ _FE at high gate bias voltage V _G , resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V _TH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μ _FE ∼ 62.02 cm ² /V · s would be suitable for the application of system-on-panel.