Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

Tien Shun Chang; Tsung Yi Lu; Tien-Sheng Chao

doi:10.1109/LED.2013.2247736

Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

Tien Shun Chang^*, Tsung Yi Lu, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased V^th.

原文	English
文章編號	6484132
頁（從 - 到）	481-486
頁數	6
期刊	IEEE Electron Device Letters
卷	34
發行號	4
DOIs	https://doi.org/10.1109/LED.2013.2247736
出版狀態	Published - 5 4月 2013

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abstract = "The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.",

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author = "Chang, {Tien Shun} and Lu, {Tsung Yi} and Tien-Sheng Chao",

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AU - Chao, Tien-Sheng

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Y1 - 2013/4/5

N2 - The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.

AB - The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.

KW - Mobility

KW - nMOSFETs

KW - strain

KW - temperature

KW - zero-temperature-coefficient (ZTC) point

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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ER -

Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

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