Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

Tien Shun Chang*, Tsung Yi Lu, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.

原文English
文章編號6484132
頁(從 - 到)481-486
頁數6
期刊IEEE Electron Device Letters
34
發行號4
DOIs
出版狀態Published - 5 4月 2013

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