Impacts of material parameters on breakdown voltage and location for power MOSFETs

Kunal Kumar, Chun Hsiang Lo, Chun Chun Chang, Tian Li Wu, Kuo Hsing Kao*, Yeong Her Wang

*此作品的通信作者

研究成果: Article同行評審

摘要

To improve the electrical performance of power devices, materials used in fabrication need to be analyzed and optimized. By numerical simulations, we reveal that the breakdown voltage (BV) and location of a lateral diffused MOS power device simultaneously depend also on trench oxide permittivity. For a given device geometry, while the trench oxide permittivity with a certain value leads to a maximal BV, a smaller (larger) value causes electrical breakdown in the Si drift channel around the bottom (top) of the trench. This trend remains the same when Si is replaced by SiC. Our study implies that any by-product reducing the trench permittivity during trench filling should be avoided.

原文English
頁(從 - 到)1163-1165
頁數3
期刊Journal of Computational Electronics
21
發行號5
DOIs
出版狀態Published - 10月 2022

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