@inproceedings{846f2df5de764a6aabbafdade828a5ea,
title = "Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices",
abstract = "In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.",
keywords = "CMOS technology, Degradation, Dielectrics, Interface states, MOS devices, Niobium compounds, Nitrogen, Stress, Temperature, Titanium compounds",
author = "Horng-Chih Lin and Lee, {D. Y.} and Ou, {S. C.} and Chao-Hsin Chien and Huang, {T. Y.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/IWGI.2003.159188",
language = "English",
series = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "76--79",
booktitle = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
address = "美國",
note = "International Workshop on Gate Insulator, IWGI 2003 ; Conference date: 06-11-2003 Through 07-11-2003",
}