Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology

Da Yuan Lee, Horng-Chih Lin, Chia Lin Chen, Tiao Yuan Huang, Ta-Hui Wang, Tze Liang Lee, Shih Chang Chen, Mong Song Liang

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this paper, we investigate the effects of HF etching on the integrity of ultra-thin oxides in dual gate oxide (DGO) CMOS technologies. We found that both the HF concentration in the etching solution and the over etching (OE) time are important parameters that greatly affect the device performance and reliability. Our results indicate that, with a proper over etching period, using a concentrated HF solution results in better ultra-thin gate oxides in terms of reduced defect density, improved device performance and reliability, compared to using diluted HF solution. It is also found for the first time that negative-bias-temperature instability (NBTI) immunity for PMOSFETs is improved by using concentrated HF solutions.

原文English
主出版物標題2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
編輯Koji Eriguchi, S. Krishnan, Terence Hook
發行者Institute of Electrical and Electronics Engineers Inc.
頁面77-80
頁數4
ISBN(電子)0780377478
DOIs
出版狀態Published - 1 一月 2003
事件2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 - Corbeil-Essonnes, France
持續時間: 24 四月 200325 四月 2003

出版系列

名字International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
2003-January

Conference

Conference2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
國家/地區France
城市Corbeil-Essonnes
期間24/04/0325/04/03

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