摘要
The effects of different substrate-contact structures (T-gate and H-gate) dynamic threshold voltage silicon-on-insulator (SOI) nMOSFETs (DTMOS) have been investigated. It is found that H-gate structure devices have higher driving current than T-gate under DTMOS-mode operation. This is because H-gate SOI devices have larger body effect factor (γ), inducing a lager reduction of threshold voltage. Besides, it is found that drain-induced-barrier-lowering (DIBL) is dramatically reduced for both T-gate and H-gate structure devices when devices are operated under DTMOS-mode.
原文 | English |
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頁(從 - 到) | 497-499 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 23 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 1 8月 2002 |