Impacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-κ LTPS-TFT

Keyphrases

• Low Temperature 100%
• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 100%
• Low-temperature Polycrystalline Silicon 100%
• Solid Phase 100%
• Fluorine Ion Implantation 100%
• High-low Temperature 100%
• HfO2 66%
• High Performance 33%
• Annealing 33%
• Hot Carrier Stress 33%
• Gate Dielectric 33%
• Threshold Voltage Instability 33%
• High Temperature 33%
• Current Ratio 33%
• Subthreshold Swing 33%
• Activation Schemes 33%
• Passivated 33%
• Preimplantation 33%
• Current Reduction 33%
• Secondary Ion Mass Spectrometer 33%

Chemistry

• Fluorine 100%
• Ion Implantation 100%
• Fluorine Ion 100%
• Dielectric Material 25%
• Secondary Ion 25%

Material Science

• Thin-Film Transistor 100%
• Ion Implantation 100%
• Hot Carrier 33%
• Dielectric Material 33%