Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel

William Cheng Yu Ma*, Chun Jung Su, Kuo Hsing Kao, Ta Chun Cho, Jing Qiang Guo, Cheng Jun Wu, Po Ying Wu, Jia Yuan Hung

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This work investigates the characteristics and reliability of double-gate (DG) and single-gate (SG) mode operations in polycrystalline-silicon nanosheet transistors (TFTs). It is observed that the threshold voltage and subthreshold swing in the DG mode are lower than those in the SG mode, while the on-state current is much higher. The DG mode provides better control over the channel potential, resulting in higher electron density and field-effect mobility. Moreover, the back-gate voltage can be used to adjust the threshold voltage of the TFT in SG mode. The impact of the back-gate voltage on the reliability of the device is also studied. The results indicate that the DG mode is more reliable than the SG mode under positive gate bias stress, as the DG mode has a stronger channel potential control ability. In contrast, the back-gate voltage has little effect on the reliability of the TFT in SG mode.

原文English
主出版物標題30th International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面129-131
頁數3
ISBN(電子)9784991216947
出版狀態Published - 2023
事件30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Hybrid, Kyoto, Japan
持續時間: 4 7月 20237 7月 2023

出版系列

名字30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

Conference

Conference30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023
國家/地區Japan
城市Hybrid, Kyoto
期間4/07/237/07/23

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