Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer

Tzu I. Tsai, Horng-Chih Lin, Yao Jen Lee*, King Sheng Chen, Jeff Wang, Fu Kuo Hsueh, Tien-Sheng Chao, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article › 同行評審

1 引文 斯高帕斯（Scopus）

指紋

深入研究「Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds