@inproceedings{cd0b37f04c8a41748d6f12ad355d7a94,
title = "Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM",
abstract = "This paper analyzes and compares the stability, margin, and performance of Ultra-Thin-Body (UTB) SOl 6T SRAM cells operating in subthreshold region with single midgap and dual work function (WF) design. Our results indicate that UTB SOl 6T SRAM cells using dual quarter band-gap WF devices (NFET/PFET = 4.35eV/4.95eV) show comparable Read Static Noise Margin (RSNM) and 84% improvement in Write Static Noise Margin (WSNM) as comparaed with that using the single mid-gap WF devices. The {"}cell{"} access time improves significantly with correspondingly higher stand-by leakage. Our study suggests that the quarter band-gap WF devices not only support the high performance applications but also meet the stability requirement and offer higher performance while trading-off leakage for subthreshold SRAM applications.",
author = "Hu, {Vita Pi Ho} and Fan, {Ming Long} and Pin Su and Chuang, {Ching Te}",
year = "2009",
month = dec,
day = "1",
doi = "10.1109/ESSDERC.2009.5331507",
language = "English",
isbn = "9781424443536",
series = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",
pages = "145--148",
booktitle = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",
note = "39th European Solid-State Device Research Conference, ESSDERC 2009 ; Conference date: 14-09-2009 Through 18-09-2009",
}