Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs

Wei Lee*, Jack J Y Kuo, Willian P N Chen, Pin Su, Min Chie Jeng

*此作品的通信作者

    研究成果: Conference contribution同行評審

    15 引文 斯高帕斯(Scopus)

    摘要

    Using an improved temperature-dependent method, this paper clarifies that channel backscattering of nanoscale PMOSFETs can be reduced by the uniaxially compressive strain. For the first time, the electrostatic potential of the source-channel junction barrier has been experimentally characterized with strain and gate voltage dependence. We further demonstrate that the strain technology can improve the drain current variation as well as the mismatching properties through the enhanced ballistic efficiency. Moreover, the improvement shows gate length and drain voltage dependence.

    原文English
    主出版物標題2009 Symposium on VLSI Technology, VLSIT 2009
    頁面112-113
    頁數2
    出版狀態Published - 15 6月 2009
    事件2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, 日本
    持續時間: 16 6月 200918 6月 2009

    出版系列

    名字Digest of Technical Papers - Symposium on VLSI Technology
    ISSN(列印)0743-1562

    Conference

    Conference2009 Symposium on VLSI Technology, VLSIT 2009
    國家/地區日本
    城市Kyoto
    期間16/06/0918/06/09

    指紋

    深入研究「Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs」主題。共同形成了獨特的指紋。

    引用此