Impact of time dependent dielectric breakdown and stress induced leakage current on the reliability of (Ba,Sr)TiO3 thin film capacitors for Gbit-scale DRAMs

Shintaro Yamamichi*, Akiko Yamamichi, Donggun Park, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba0.5Sr0.5)TiO3 (BST) thin films. TDDB characteristics show a lifetime longer than 10 years at +1 V for BST films with an SiO2 equivalent thickness (teq) of 0.70 nm. The breakdown is strongly affected by leakage current properties, and does not depend on the dielectric constant. SILC is studied at +1 V in time domain after stress charge injection into BST films. 10 year operation for Gbit-scale DRAMs can be guaranteed in spite of the charge loss caused by SILC.

原文English
頁(從 - 到)261-264
頁數4
期刊Technical Digest - International Electron Devices Meeting, IEDM
46
發行號2
DOIs
出版狀態Published - 1 十二月 1997
事件1997 International Electron Devices Meeting - Washington, DC, USA
持續時間: 7 十二月 199710 十二月 1997

指紋

深入研究「Impact of time dependent dielectric breakdown and stress induced leakage current on the reliability of (Ba,Sr)TiO3 thin film capacitors for Gbit-scale DRAMs」主題。共同形成了獨特的指紋。

引用此