Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba0.5Sr0.5)TiO3 (BST) thin films. TDDB characteristics show a lifetime longer than 10 years at +1 V for BST films with an SiO2 equivalent thickness (teq) of 0.70 nm. The breakdown is strongly affected by leakage current properties, and does not depend on the dielectric constant. SILC is studied at +1 V in time domain after stress charge injection into BST films. 10 year operation for Gbit-scale DRAMs can be guaranteed in spite of the charge loss caused by SILC.
|頁（從 - 到）||261-264|
|期刊||Technical Digest - International Electron Devices Meeting, IEDM|
|出版狀態||Published - 1 十二月 1997|
|事件||1997 International Electron Devices Meeting - Washington, DC, USA|
持續時間: 7 十二月 1997 → 10 十二月 1997