Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO2 film across the phase transition

Xue Chang, Jiang Li, Jian Mu, Chun Hao Ma, Wanxia Huang, Hong Fu Zhu, Qiao Liu, Liang Hui Du, Sen Cheng Zhong, Zhao Hui Zhai, Sujit Das, Yen Lin Huang, Gang Bei Zhu, Li Guo Zhu, Qiwu Shi

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Exploring flexible electronics is on the verge of innovative breakthroughs in terahertz (THz) communication technology. Vanadium dioxide (VO2) with insulator-metal transition (IMT) has excellent application potential in various THz smart devices, but the associated THz modulation properties in the flexible state have rarely been reported. Herein, we deposited an epitaxial VO2 film on a flexible mica substrate via pulsed-laser deposition and investigated its THz modulation properties under different uniaxial strains across the phase transition. It was observed that the THz modulation depth increases under compressive strain and decreases under tensile strain. Moreover, the phase-transition threshold depends on the uniaxial strain. Particularly, the rate of the phase transition temperature depends on the uniaxial strain and reaches approximately 6 °C/% in the temperature-induced phase transition. The optical trigger threshold in laser-induced phase transition decreased by 38.9% under compressive strain but increased by 36.7% under tensile strain, compared to the initial state without uniaxial strain. These findings demonstrate the uniaxial strain-induced low-power triggered THz modulation and provide new insights for applying phase transition oxide films in THz flexible electronics.

原文English
頁(從 - 到)13243-13254
頁數12
期刊Optics Express
31
發行號8
DOIs
出版狀態Published - 10 4月 2023

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