Impact of shielding line on CDM ESD robustness of core circuits in a 65-nm CMOS process

Ming-Dou Ker*, Chun Yu Lin, Chang Tang-Long Chang

*此作品的通信作者

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    The charged-device-model (CDM) ESD robustness of core circuit with/without the shielding line was studied in a 65-nm CMOS process. Verified in silicon chip, the CDM ESD robustness of core circuit with the shielding line was degraded. The damage mechanism and failure location of the test circuits were investigated in this work.

    原文English
    主出版物標題2011 International Reliability Physics Symposium, IRPS 2011
    頁面EL.2.1-EL.2.2
    DOIs
    出版狀態Published - 2011
    事件49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
    持續時間: 10 4月 201114 4月 2011

    出版系列

    名字IEEE International Reliability Physics Symposium Proceedings
    ISSN(列印)1541-7026

    Conference

    Conference49th International Reliability Physics Symposium, IRPS 2011
    國家/地區United States
    城市Monterey, CA
    期間10/04/1114/04/11

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