Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS

Chih Chang Cheng*, J. F. Lin, Ta-Hui Wang, T. H. Hsieh, J. T. Tzeng, Y. C. Jong, R. S. Liou, Samuel C. Pan, S. L. Hsu

*此作品的通信作者

研究成果: Conference article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction of self-heating effect.

原文English
文章編號4419090
頁(從 - 到)881-884
頁數4
期刊Technical Digest - International Electron Devices Meeting, IEDM
DOIs
出版狀態Published - 1 十二月 2007
事件2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
持續時間: 10 十二月 200712 十二月 2007

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