Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction of self-heating effect.
|頁（從 - 到）||881-884|
|期刊||Technical Digest - International Electron Devices Meeting, IEDM|
|出版狀態||Published - 1 十二月 2007|
|事件||2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States|
持續時間: 10 十二月 2007 → 12 十二月 2007