TY - GEN
T1 - Impact of selective ablation of self-assembly monolayer by localized Joule heating on silicon nanoelectronic sensors
AU - Liu, H. H.
AU - Lin, T. H.
AU - Sheu, Jeng-Tzong
PY - 2012/12/1
Y1 - 2012/12/1
N2 - Silicon nanodevice biosensors have been attracted a lot of attention due to its advantages of label-free, real-time and very high sensitive detection. This study employs self-assembly monolayer (SAM) of methoxy-poly(ethyleneglycol) silane (MPEG-sil) as passivation on Si nanodevices. Ablation of SAM by Joule heating (JH) was performed at n- region of a nanobelt device, where the linker molecules, biotin were modified subsequently. Detection of Alexa dye-labeled Streptavidin (SA) showed that the fluorescence intensity at n - region increased with each 50-μl SA injection and saturated after the 4th injection. A difference of fluorescence intensity between SAM-ablated device and without passivation is 4.9 fold. Threshold voltage (Vth) shifted ca. 35 mV after the 4th injection for SAM-ablated device and as-fabricated device exhibited only a 10-mV V th shift. The results indicated that SAM-ablated device possess potential in reduction of sensing time and in increase of sensitivity for low concentration detection.
AB - Silicon nanodevice biosensors have been attracted a lot of attention due to its advantages of label-free, real-time and very high sensitive detection. This study employs self-assembly monolayer (SAM) of methoxy-poly(ethyleneglycol) silane (MPEG-sil) as passivation on Si nanodevices. Ablation of SAM by Joule heating (JH) was performed at n- region of a nanobelt device, where the linker molecules, biotin were modified subsequently. Detection of Alexa dye-labeled Streptavidin (SA) showed that the fluorescence intensity at n - region increased with each 50-μl SA injection and saturated after the 4th injection. A difference of fluorescence intensity between SAM-ablated device and without passivation is 4.9 fold. Threshold voltage (Vth) shifted ca. 35 mV after the 4th injection for SAM-ablated device and as-fabricated device exhibited only a 10-mV V th shift. The results indicated that SAM-ablated device possess potential in reduction of sensing time and in increase of sensitivity for low concentration detection.
UR - http://www.scopus.com/inward/record.url?scp=84873950825&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2012.6411470
DO - 10.1109/ICSENS.2012.6411470
M3 - Conference contribution
AN - SCOPUS:84873950825
SN - 9781457717659
T3 - Proceedings of IEEE Sensors
BT - IEEE SENSORS 2012 - Proceedings
T2 - 11th IEEE SENSORS 2012 Conference
Y2 - 28 October 2012 through 31 October 2012
ER -