跳至主導覽
跳至搜尋
跳過主要內容
國立陽明交通大學研發優勢分析平台 首頁
English
中文
首頁
人員
單位
研究成果
計畫
獎項
活動
貴重儀器
影響
按專業知識、姓名或所屬機構搜尋
Impact of random interface traps on asymmetric characteristic fluctuation of 16-nm-gate MOSFET devices
Yiming Li
*
*
此作品的通信作者
電信工程研究所
研究成果
:
Chapter
›
同行評審
1
引文 斯高帕斯(Scopus)
總覽
指紋
指紋
深入研究「Impact of random interface traps on asymmetric characteristic fluctuation of 16-nm-gate MOSFET devices」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
2D Interface
33%
65nm CMOS
33%
Asymmetric Feature
100%
Characteristic Fluctuation
100%
CMOS Devices
33%
Complementary Metal Oxide Semiconductor
33%
Device Characteristics
100%
Device Fabrication
33%
Device Technology
33%
Device Variability
33%
Electrical Characteristics
33%
Fabrication Challenges
33%
Gate Metal
100%
High Silicon
33%
Induced Variability
33%
Interface Trap Fluctuation
33%
Interface Traps
100%
Intrinsic Fluctuations
33%
Leakage Current
33%
Local Interaction
33%
Metal Gate
33%
Metal-oxide-semiconductor Devices
33%
MOSFET
100%
Nanometer Scale
33%
Performance Improvement
33%
Physical Characteristics
33%
Process Variation Effect
33%
Random Dopant Fluctuation
100%
Random Effects
33%
Random Interface Trap
100%
Random Source
33%
Silicon Devices
33%
Systematic Variation
33%
Technology Performance
33%
Technology Scaling
33%
Transistor Device
100%
Trap Model
66%
Variant Effect
33%
Computer Science
Complementary Metal Oxide Semiconductor
50%
Effect Transistor
100%
Leakage Current
50%
Performance Improvement
50%
Process Variation
50%
Transistor Device
100%
Engineering
Complementary Metal-Oxide-Semiconductor Device
14%
Dopants
42%
Interface Trap
100%
Intrinsic Parameter
14%
Metal Gate
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Nanometre
14%
One Dimensional
14%
Performance Improvement
14%
Process Variation
14%
Random Effect
28%
Reduce Leakage
14%
Silicon Device
14%
Material Science
Complementary Metal-Oxide-Semiconductor Device
33%
Doping (Additives)
100%
Electrical Property
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Silicon
33%
Silicon Device
33%
Physics
Field Effect Transistor
100%
Metal Oxide Semiconductor
100%
Semiconductor Device
33%