Impact of post-deposition-annealing on the electrical characteristics of HfO x N y gate dielectric on Ge substrate

Chao Ching Cheng; Chao-Hsin Chien; Ching Wei Chen; Shih Lu Hsu; Ming Yi Yang; Chien Chao Huang; Fu Liang Yang; Chun Yen Chang

doi:10.1016/j.mee.2005.04.033

Impact of post-deposition-annealing on the electrical characteristics of HfO _x N _y gate dielectric on Ge substrate

Chao Ching Cheng^*, Chao-Hsin Chien, Ching Wei Chen, Shih Lu Hsu, Ming Yi Yang, Chien Chao Huang, Fu Liang Yang, Chun Yen Chang

^*此作品的通信作者

電子研究所

研究成果 › 同行評審

15 引文斯高帕斯（Scopus）

摘要

We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfO _xN_y/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 Å with a low leakage current of 1.8 × 10^-5A/cm² at V_G = -1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.

原文	English
頁（從 - 到）	30-33
頁數	4
期刊	Microelectronic Engineering
卷	80
發行號	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.033
出版狀態	Published - 17 6月 2005
事件	14th Biennial Conference on Insulating Films on Semiconductors - 持續時間: 22 6月 2005 → 24 6月 2005

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10.1016/j.mee.2005.04.033

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引用此

@article{67e432315b224377a9b5506709bcfc4d,

title = "Impact of post-deposition-annealing on the electrical characteristics of HfO x N y gate dielectric on Ge substrate",

abstract = "We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfO xNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 {\AA} with a low leakage current of 1.8 × 10-5A/cm2 at VG = -1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.",

keywords = "Germanium, HfON, High-k gate dielectric, Post-deposition-annealing",

author = "Cheng, \{Chao Ching\} and Chao-Hsin Chien and Chen, \{Ching Wei\} and Hsu, \{Shih Lu\} and Yang, \{Ming Yi\} and Huang, \{Chien Chao\} and Yang, \{Fu Liang\} and Chang, \{Chun Yen\}",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.033",

language = "English",

volume = "80",

pages = "30--33",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "SUPPL.",

note = "14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

}

TY - JOUR

T1 - Impact of post-deposition-annealing on the electrical characteristics of HfO x N y gate dielectric on Ge substrate

AU - Cheng, Chao Ching

AU - Chien, Chao-Hsin

AU - Chen, Ching Wei

AU - Hsu, Shih Lu

AU - Yang, Ming Yi

AU - Huang, Chien Chao

AU - Yang, Fu Liang

AU - Chang, Chun Yen

PY - 2005/6/17

Y1 - 2005/6/17

N2 - We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfO xNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 Å with a low leakage current of 1.8 × 10-5A/cm2 at VG = -1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.

AB - We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfO xNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 Å with a low leakage current of 1.8 × 10-5A/cm2 at VG = -1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.

KW - Germanium

KW - HfON

KW - High-k gate dielectric

KW - Post-deposition-annealing

UR - https://www.scopus.com/pages/publications/19944384938

U2 - 10.1016/j.mee.2005.04.033

DO - 10.1016/j.mee.2005.04.033

M3 - Conference article

AN - SCOPUS:19944384938

SN - 0167-9317

VL - 80

SP - 30

EP - 33

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -

Impact of post-deposition-annealing on the electrical characteristics of HfO x N y gate dielectric on Ge substrate

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Impact of post-deposition-annealing on the electrical characteristics of HfO _x N _y gate dielectric on Ge substrate