摘要
We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfO x N y /Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 Å with a low leakage current of 1.8 × 10 -5 A/cm 2 at V G = -1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.
原文 | English |
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頁(從 - 到) | 30-33 |
頁數 | 4 |
期刊 | Microelectronic Engineering |
卷 | 80 |
發行號 | SUPPL. |
DOIs | |
出版狀態 | Published - 17 6月 2005 |
事件 | 14th Biennial Conference on Insulating Films on Semiconductors - 持續時間: 22 6月 2005 → 24 6月 2005 |