Impact of O₂ plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

The impact of O₂ plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O₂ plasma treatment. The uniformity of O₂ plasma sample is better than control sample, and also the set and reset voltage are more uniform and smaller to suitable for memory operation. Moreover, the O₂ plasma sample shows excellent memory performance, such as high switching endurance cycles (up to 3 × 10³), long retention time for 10⁴ s at 85 °C. These results show that the surface modification with O₂ plasma on IWZO CBRAM device is a critical technique for next generation memory applications.