Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

T. Y. Chang*, T. F. Lei, Tien-Sheng Chao, S. W. Chen, L. M. Kao, S. K. Chen, A. Tuan, T. P. Su

*此作品的通信作者

研究成果: Article同行評審

摘要

In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

原文English
頁(從 - 到)1097-1101
頁數5
期刊Solid-State Electronics
46
發行號8
DOIs
出版狀態Published - 1 8月 2002

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