Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

T. Y. Chang; T. F. Lei; Tien-Sheng Chao; S. W. Chen; L. M. Kao; S. K. Chen; A. Tuan; T. P. Su

doi:10.1016/S0038-1101(02)00048-5

Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

T. Y. Chang^*, T. F. Lei, Tien-Sheng Chao, S. W. Chen, L. M. Kao, S. K. Chen, A. Tuan, T. P. Su

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

摘要

In our previous study, using NF₃ annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO₂ and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO₂ and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

原文	English
頁（從 - 到）	1097-1101
頁數	5
期刊	Solid-State Electronics
卷	46
發行號	8
DOIs	https://doi.org/10.1016/S0038-1101(02)00048-5
出版狀態	Published - 1 8月 2002

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title = "Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process",

abstract = "In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.",

keywords = "Breakdown charge and stress induce leakage current (SILC), Co-salicide, Fluorine and nitrogen implantation, Gate oxide integrity (GOI), Leakage performance",

author = "Chang, {T. Y.} and Lei, {T. F.} and Tien-Sheng Chao and Chen, {S. W.} and Kao, {L. M.} and Chen, {S. K.} and A. Tuan and Su, {T. P.}",

year = "2002",

month = aug,

day = "1",

doi = "10.1016/S0038-1101(02)00048-5",

language = "English",

volume = "46",

pages = "1097--1101",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

AU - Chang, T. Y.

AU - Lei, T. F.

AU - Chao, Tien-Sheng

AU - Chen, S. W.

AU - Kao, L. M.

AU - Chen, S. K.

AU - Tuan, A.

AU - Su, T. P.

PY - 2002/8/1

Y1 - 2002/8/1

N2 - In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

AB - In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

KW - Breakdown charge and stress induce leakage current (SILC)

KW - Co-salicide

KW - Fluorine and nitrogen implantation

KW - Gate oxide integrity (GOI)

KW - Leakage performance

UR - http://www.scopus.com/inward/record.url?scp=0036680404&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00048-5

DO - 10.1016/S0038-1101(02)00048-5

M3 - Article

AN - SCOPUS:0036680404

VL - 46

SP - 1097

EP - 1101

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 8

ER -

Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

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