TY - GEN
T1 - Impact of In and Ga Fractions in Lattice-Matched InAlGaN Barrier Layer on Performance of InAlGaN/GaN MISHEMT
AU - Langpoklakpam, Catherine
AU - Hsiao, Yi Kai
AU - Lin, Chun Hsiung
AU - Chang, Edward Yi
AU - Kuo, Hao Chung
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This study investigates the impact of lattice-matched InAlGaN (w/i GaN) top barrier layer for diverse In and Al fractions on electrical characteristics of InAlGaN/GaN MISHEMT. To maintain lattice matching with GaN, the In and Al content must increase or decrease simultaneously. Increasing In and Al fractions lead to a more negative threshold voltage and higher drain current. This can be ascribed to creating a more profound quantum well and improving carrier confinement within the two-dimensional electron gas (2DEG). Conversely, as In and Al mole fractions reduce, the on-resistance of the devices decreases due to reduced 2DEG confinement. This work suggests that the performance of InAlGaN/GaN MISHEMT can be effectively optimized by adjusting the fractions of In and Al in the lattice-matched InAlGaN barrier layer.
AB - This study investigates the impact of lattice-matched InAlGaN (w/i GaN) top barrier layer for diverse In and Al fractions on electrical characteristics of InAlGaN/GaN MISHEMT. To maintain lattice matching with GaN, the In and Al content must increase or decrease simultaneously. Increasing In and Al fractions lead to a more negative threshold voltage and higher drain current. This can be ascribed to creating a more profound quantum well and improving carrier confinement within the two-dimensional electron gas (2DEG). Conversely, as In and Al mole fractions reduce, the on-resistance of the devices decreases due to reduced 2DEG confinement. This work suggests that the performance of InAlGaN/GaN MISHEMT can be effectively optimized by adjusting the fractions of In and Al in the lattice-matched InAlGaN barrier layer.
UR - http://www.scopus.com/inward/record.url?scp=85196731728&partnerID=8YFLogxK
U2 - 10.1109/VLSITSA60681.2024.10546393
DO - 10.1109/VLSITSA60681.2024.10546393
M3 - Conference contribution
AN - SCOPUS:85196731728
T3 - 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings
BT - 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024
Y2 - 22 April 2024 through 25 April 2024
ER -